| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),ma |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon Technologies |
IPA60R190E6 • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and re |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparamete |
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Infineon Technologies |
MOSFET << GC8K@E> & 8CF> |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, halogen free (excluding TO-252) Applications PFC stages, hard switching PWM stages and resonant |
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Infineon Technologies |
MOSFET XRPbX^]a PRR^`SX]V b^ A<;<9 "A&IJ;+) P]S A |
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Infineon Technologies |
Power Transistor ( = - == 3 - =L 3 $ 6I: HDJG8: KDAI6<: - @L deReZT . % O - DL: G9>HH>E6I>DC ) e`e , < Y , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: , [ , deX * DJCI>C< IDGFJ: * 6C9 * H8G: LH DHS[L ,* *2 2, 1)) *'+ * |
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Infineon Technologies |
CoolMOS Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon Technologies AG |
CoolMOS Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q |
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Infineon Technologies |
MOSFET fj\gV[\aZ JPG fgTZXf TaW eXfbaTag fj\gV[\aZ JPG fgTZXf Ybe X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( =C7-'D-''6-# =C5-'D-''6=CC-'D-''6-# =C4-'D-''6- AL>EI ZSX ) D>NB ZSX ( MJOL@B ZSX * J_XTfX abgX4 @be GIL@?M |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
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Infineon Technologies |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
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