| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
SPW47N60C3 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
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Infineon Technologies |
Power Transistor • Worldwide best R ds,on in TO247 • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ SPW47 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature www.DataSheet4U.com Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N1 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level www.DataSheet4U.com 175°C operating temperature Avalanche rated dv/dt rated 100 26 47 P-TO220-3-1 V m A Type SP |
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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW47N60S5 Package P |
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Infineon Technologies |
Cool MOS Power Transistor 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 Product Summary VDS RDS(on) ID 600 0.07 47 P-TO247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • I |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A |
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Infineon Technologies |
Power-Transistor 2 ? 5 $ - , 6F $ 9$]aY_R $ 6I # 6I Q/ 'Q. ) =I ) =I / ( 8 T ) =I / ( 8 T ( 8 T ( 8 T $ 9 ' =I " $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T A2 86 FJU] |
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Infineon Technologies |
Power-Transistor 2 ? 5 $ - , 6F $ 9$]aY_R $ 6I # 6I Q/ 'Q. ) =I ) =I / ( 8 T ) =I / ( 8 T ( 8 T ( 8 T $ 9 ' =I " $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T A2 86 FJU] |
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Infineon Technologies |
CoolMOS Power Transistor TM Power Transistor Product Summary V DS R DS(on),max ID 600 V • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge www.DataSheet4U.com • Extreme dv /dt r |
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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 26 47 P-TO220-3-1 V m A Type SPP47N10L SPB47N10L SP |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 33 47 P-TO220-3-1 V m A Type IPP47N10 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 33 47 P-TO220-3-1 V m A Type IPP47N10 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V A m Type SPP47N10 SPB47N10 SPI47N10 Package |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 26 47 P-TO220-3-1 V A m Type SPP47N10L SPB47N10L S |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 33 47 P-TO220-3-1 V m A Type IPP47N10 |
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