| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon Technologies |
Power Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
|
|
|
|
Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature IPD09N03LA IPF |
|
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
|
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
|
|
|
|
Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
|
|
|
|
Infineon Technologies |
N-Channel Power MOSFET • • • • • • • • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Super |
|
|
|
|
Infineon Technologies |
MOSFET •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant Table1KeyPerfo |
|
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
|
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) ID 30 8.9 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • |
|
|
|
|
Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature IPD09N03LA IPF |
|
|
|
|
Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
|
|
|
|
Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
|
|
|
|
Infineon Technologies |
SIPMOS PowerTransistor • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Ty |
|
|
|
|
Infineon Technologies |
SIPMOS PowerTransistor • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Ty |
|