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Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead p |
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Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead p |
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Infineon Technologies |
Smart Low Side Power Switch • Logic Level input • Short circuit and Overload protection • Current limitation • Input protection (ESD) • Thermal protection with auto restart • Compatible to standard Power MOSFET • Analog driving possible • Green Product (RoHS compliant) • AEC Qu |
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Infineon Technologies |
IPB05N03L • N-Channel • Logic Level • Very low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters IPP05N0 |
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Infineon Technologies |
Small-Signal-Transistor • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • Pb-free lead plating; RoHS compliant • Halogen free according to IEC61249-2-21 BSL205N Product Summary VDS RDS(on),max ID V |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 4.9 80 P- TO220 -3-1 V mΩ A • Logic Level • Very low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operati |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 4.9 80 P- TO220 -3-1 V mΩ A • Logic Level • Very low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operati |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C op |
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Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C op |
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Infineon Technologies |
IPU05N03LAG • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max (SMD version) ID 25 5 |
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Infineon Technologies |
Power-Transistor • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary |
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Infineon Technologies |
OptiMOS3 Power-Transistor P ' 3 81>>5< >? A =1<< 5E5< P G 3 5< < 5>C71C 5 3 81A 75 GR 9H"[Z# @A ? 4D 3 C ( & P. 5A H< ? F ? > A 5B 9 B C 1>3 5 R 9H"[Z# P S ? @5A 1C 9 >7 C 5=@5A 1C D A 5 P ) 2 6 A 55 < 514 @< 1C 9 >7 + ? " , 3 ? =@< 9 1>C P* D 1< 9 6 9 54 13 3 |
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Infineon Technologies |
Power-Transistor ) =I % a\a ( 8 U ( W ( `aT # 4=:> 2 E:4 42 E68@CJ #( # EIT\M 1( -/ ))&, +.( +// r*( )-. DVQ[ 6 Z@ K L U , 6G A2 86 @IYIUM[MY B`UJWT 4WVLQ[QWVZ '41 =9 -8/4-=-/ |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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