Infineon T40 fiche technique

No.	Partie #	Fabricant	Description
1	IMT40R015M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
2	IMT40R025M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
3	IMT40R036M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
4	T4003N	Infineon	Phase Control Thyristor  Direkt lichtgezündeter Thyristor mit integrierter Schutzfunktion  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe DC Sperrstabilität  Hohe Stoßstrombelastbarkeit  Hohe Einschalt di/dt Fähigkeit  Light triggered thyrist
5	IMT40R045M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
6	IGT40R070D1E8220	Infineon	Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified according to JEDEC Standards (J
7	IMT40R011M2H	Infineon	400V G2 MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
8	MTT40Axxx	Infineon Technologies	(MTTxxA Series) Circuit Configurations Available
9	T4021N	Infineon	Phase Control Thyristor  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe DC Sperrstabilität  Hohe Stoßstrombelastbarkeit  Hoher Gehäusebruchstrom  Hohe Einschalt di/dt Fähigkeit  Full blocking 50/60Hz over a wide range temperature range  High