Infineon T16 fiche technique

No.	Partie #	Fabricant	Description
1	BAT16-046	Infineon Technologies	(BATxx-xxx) Microwave RF & Tuner Diodes
2	IDT16S60C	Infineon Technologies	2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl
3	BAT165	Infineon	Medium Power AF Schottky Diode o be considered. Please refer to the atteched curves. 3For calculation of RthJA please refer to Application Note Thermal Resistance Unit K/W 1 2007-04-19 BAT165... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Sy
4	TT160N16SOF	Infineon	Phase Control Thyristor  Solder-Bond Technology  Industrial standard package  Electrically insulated base plate Typical Applications  Soft starter  Rectifier for drives applications  Power controllers  Rectifiers for UPS  Battery chargers  Static switches content
5	TT162N	Infineon	Phase Control Thyristor vj max, tP = 10 ms DIN IEC 747-6 f = 50 Hz, iGM = 0,6 A, diG/dt = 0,6 A/µs Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter C 6.Kennbuchstabe / 6th letter F VDRM,VRRM 1200 VDSM VRSM 1200 1300 ITRMSM ITAVM ITSM I²t (diT/dt)cr (dvD/dt)cr
6	TT160N18SOF	Infineon	Phase Control Thyristor Module  Solder-Bond Technology  Industrial standard package  Electrically insulated base plate Typical Applications  Soft starter  Rectifier for drives applications  Power controllers  Rectifiers for UPS  Battery chargers  Static switches content
7	T1620N	Infineon	Phase Control Thyristor  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe Stoßstrombelastbarkeit  Hermetisch dichtes Keramikgehäuse  Hohe dv/dt Fähigkeit  Hohe Einschaltfähigkeit di/dt  Full blocking 50/60Hz over a wide range temperature range
8	T1601N	Infineon	Phase Control Thyristor  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe DC Sperrstabilität  Hohe Stoßstrombelastbarkeit  Hoher Gehäusebruchstrom  Hohe Einschalt di/dt Fähigkeit  Full blocking 50/60Hz over a wide range temperature range  High