| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
MOSFET • VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A at Tc = 25°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection te |
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Infineon |
MOSFET • VDSS = 2000 V at Tvj = 25°C • IDCC = 34 A at Tc = 25°C • RDS(on) = 75 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection tec |
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