No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT ltage Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Marking Code Package G1 |
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Infineon |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
IGBT Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2 |
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Infineon Technologies |
IGBT |
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Infineon |
IGBT TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 |
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Infineon |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature |
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Infineon |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperatur |
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Infineon |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply TRENCHSTOP™ |
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Infineon Technologies |
IGP30N60T lector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 187 -40...+175 -55... |
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