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Infineon |
IGBT e peak reverse voltage Diode forward voltage Tvj =25°C @ IC=150A Tvj =150°C @ IC=150A Tvj=25°C Tvj =25°C @ IC=150A Tvj =150°C @ IC=150A Operating junction temperature IGBT and Diode Turn on energy loss per pulse Turn off energy loss per pulse Reve |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • Tvjop=150°C MechanicalFeatures • HighPowerandThermalCyclingCapability • IsolatedBasePlate • CopperBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approved |
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Infineon |
IGBT • LowSwitchingLosses • Tvjop=150°C • LowVCEsat MechanicalFeatures • HighPowerandThermalCyclingCapability • IsolatedBasePlate • CopperBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approved |
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Infineon |
IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C MechanicalFeatures • Highpowerandthermalcyclingcapability • Isolatedbaseplate • Copperbaseplate • Soldercontacttechnology • Standardhousing ModuleLabelCode BarcodeCode128 DMX-Co |
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Infineon |
IGBT-Module 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 2,40 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internal |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Soldercontacttechnology • Standardhousing • Pre-appliedThermalIn |
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Infineon |
IGBT peak reverse voltage Diode forward voltage Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Tvj=25°C Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Operating junction temperature IGBT and Diode Turn on energy loss per pulse Turn off energy loss per pulse Rever |
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Infineon |
IGBT e peak reverse voltage Diode forward voltage Tvj =25°C @ IC=100A Tvj =150°C @ IC=100A Tvj=25°C Tvj =25°C @ IC=100A Tvj =150°C @ IC=100A Operating junction temperature IGBT and Diode Turn on energy loss per pulse Turn off energy loss per pulse Reve |
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