Infineon IDM fiche technique

No.	Partie #	Fabricant	Description
1	IDM05G120C5	Infineon	Silicon Carbide Schottky Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution 
2	IDM08G120C5	Infineon	Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution 
3	IDM10G120C5	Infineon	Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution 
4	IDM02G120C5	Infineon	Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution