| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
IHW20T120 = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Short circu |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon |
Reverse conducting IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon |
Reverse conducting IGBT •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highrugge |
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Infineon Technologies |
IHW15N120R • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mb/s/ 1310 nm Tx / 1310 nm Rx • Integrated Beam Splitter • Bi-Directional Transmission in a single optical window • Single fiber solution, singlemode fiber pigtail with different connector options • Data rate up to 155 Mbit/s • FP Laser Diode with Multi-Quantum Well structure, wa |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx • • • • • • • • • Single fiber solution saving overall system cost Suitable for data rates up to 155 Mbit/s Single mode fiber pigtail with different connector options Industry standard 2x5 SFF MSA footprint Integrated WDM filter for dual wavelength T |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx • • • • • • • • • Single fiber solution saving overall system cost Suitable for data rates up to 155 Mbit/s Single mode fiber pigtail with different connector options Industry standard 2x5 SFF MSA footprint Integrated WDM filter for dual wavelength T |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mb/s/ 1310 nm Tx / 1310 nm Rx • Integrated Beam Splitter • Bi-Directional Transmission in a single optical window • Single fiber solution, singlemode fiber pigtail with different connector options • Data rate up to 155 Mbit/s • FP Laser Diode with Multi-Quantum Well structure, wa |
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Infineon |
Silicon Carbide Diode Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant |
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Infineon |
IGBT • VCE = 650 V • IC = 20 A • Pin-to-pin creepage distance > 4.8 mm • Pin-to-pin clearance distance > 3.4 mm • Monolithic diode optimized for PFC and welding applications • Stable temperature behavior • Very low VCEsat and low Eoff • Easy parallel swit |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx • • • • • • • • • Single fiber solution saving overall system cost Suitable for data rates up to 155 Mbit/s Single mode fiber pigtail with different connector options Industry standard 2x5 SFF MSA footprint Integrated WDM filter for dual wavelength T |
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Infineon Technologies |
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx • • • • • • • • • Single fiber solution saving overall system cost Suitable for data rates up to 155 Mbit/s Single mode fiber pigtail with different connector options Industry standard 2x5 SFF MSA footprint Integrated WDM filter for dual wavelength T |
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Infineon |
IHW20R120R2 • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon |
Diode Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution |
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Infineon |
SiC Schottky Diode Best in class forward voltage (1.25 V) Best in class figure of merit (Qc x VF) High dv/dt ruggedness (150 V/ns) Benefits System efficiency improvement System cost and size savings due to the reduced cooling requirements Enabling higher f |
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Infineon Technologies |
Reverse conducting IGBT • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop ® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy paral |
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Infineon |
MOSFET • VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A at Tc = 25°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection te |
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Infineon |
MOSFET • VDSS = 2000 V at Tvj = 25°C • IDCC = 34 A at Tc = 25°C • RDS(on) = 75 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection tec |
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