No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C MechanicalFeatures • Highpowerandthermalcyclingcapability • Isolatedbaseplate • Copperbaseplate • Soldercontacttechnology • Standardhousing ModuleLabelCode BarcodeCode128 DMX-Co |
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Infineon |
IGBT peak reverse voltage Diode forward voltage Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Tvj=25°C Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Operating junction temperature IGBT and Diode Turn on energy loss per pulse Turn off energy loss per pulse Rever |
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Infineon |
IGBT 200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C MechanicalFeatures • IntegratedNTCtemperaturesensor • CopperBasePlate • SolderContactTechnol |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • TrenchIGBT3 • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated m |
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Infineon |
IGBT • LowVCEsat • TrenchstopTMIGBT7 • Overloadoperationupto175°C MechanicalFeatures • 2.5kVAC1mininsulation • Al2O3substratewithlowthermalresistance • Highpowerdensity • Compactdesign • PressFITcontacttechnology ModuleLabelCode Ba |
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Infineon |
IGBT • LowVCEsat • TrenchstopTMIGBT7 • Overloadoperationupto175°C MechanicalFeatures • 2.5kVAC1mininsulation • Al2O3substratewithlowthermalresistance • Highpowerdensity • Compactdesign • Soldercontacttechnology ModuleLabelCode Barc |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • TrenchIGBT4 • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated m |
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Infineon |
IGBT • Highshort-circuitcapability • Unbeatablerobustness • TrenchIGBT4 • Tvjop=150°C • Highsurgecurrentcapability MechanischeEigenschaften • HohemechanischeRobustheit • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • RoH |
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Infineon |
IGBT • High Short Circuit Capability, Self Limiting Short CircuitCurrent • UnbeatableRobustness • TrenchIGBT4 • Tvjop=150°C • Highsurgecurrentcapability MechanicalFeatures • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • Isola |
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Infineon |
IGBT -emittersaturationvoltage IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 7,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = - |
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Infineon |
IGBT • LowVCEsat • TrenchIGBT4 • Tvjop=150°C MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • CopperBasePlate • PressFITContactTechnology • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approv |
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Infineon |
IGBT IC = 25 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskap |
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Infineon |
IGBT • High Short Circuit Capability, Self Limiting Short CircuitCurrent • UnbeatableRobustness • TrenchIGBT4 • Tvjop=150°C • Highsurgecurrentcapability MechanicalFeatures • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • Isola |
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Infineon |
IGBT = 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 9,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein |
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Infineon |
IGBT-Module 00 5,8 2,10 3,3 16,0 0,75 0,25 0,30 0,09 0,10 0,55 0,65 0,13 0,16 max. 2,15 6,5 5,0 400 V V V µC Ω nF nF mA nA µs µs µs µs µs µs µs µs mJ mJ mJ mJ V A A IC nom IC ICRM Ptot VGES A W V CharakteristischeWerte/Chara |
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