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Infineon FS2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IFS200B12N3E4_B31

Infineon
IGBT

• Lowswitchinglosses
• LowVCEsat
• Tvjop=150°C MechanicalFeatures
• Highpowerandthermalcyclingcapability
• Isolatedbaseplate
• Copperbaseplate
• Soldercontacttechnology
• Standardhousing ModuleLabelCode BarcodeCode128 DMX-Co
Datasheet
2
IFS200V12PT4

Infineon
IGBT
peak reverse voltage Diode forward voltage Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Tvj=25°C Tvj =25°C @ IC=200A Tvj =150°C @ IC=200A Operating junction temperature IGBT and Diode Turn on energy loss per pulse Turn off energy loss per pulse Rever
Datasheet
3
FS200R06KE3

Infineon
IGBT
200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein
Datasheet
4
FS200R12KT4R

Infineon
IGBT-Module
Datasheet
5
FS200R07A1E3

Infineon
IGBT-Module
Datasheet
6
FS200R07N3E4R_B11

Infineon
IGBT

• Increasedblockingvoltagecapabilityto650V
• High Short Circuit Capability, Self Limiting Short CircuitCurrent
• TrenchIGBT4
• Tvjop=150°C MechanicalFeatures
• IntegratedNTCtemperaturesensor
• CopperBasePlate
• SolderContactTechnol
Datasheet
7
FS200R12PT4

Infineon
IGBT-Module
Datasheet
8
FS200R07N3E4R

Infineon
IGBT-Module
Datasheet
9
FS20R06W1E3_B11

Infineon
IGBT

• LowSwitchingLosses
• LowVCEsat
• TrenchIGBT3
• VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated m
Datasheet
10
FS25R12W1T7_B11

Infineon
IGBT

• LowVCEsat
• TrenchstopTMIGBT7
• Overloadoperationupto175°C MechanicalFeatures
• 2.5kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• Highpowerdensity
• Compactdesign
• PressFITcontacttechnology ModuleLabelCode Ba
Datasheet
11
FS25R12W1T7

Infineon
IGBT

• LowVCEsat
• TrenchstopTMIGBT7
• Overloadoperationupto175°C MechanicalFeatures
• 2.5kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• Highpowerdensity
• Compactdesign
• Soldercontacttechnology ModuleLabelCode Barc
Datasheet
12
FS25R12W1T4_B11

Infineon
IGBT

• LowSwitchingLosses
• LowVCEsat
• TrenchIGBT4
• VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated m
Datasheet
13
FS225R12OE4P

Infineon
IGBT

• Highshort-circuitcapability
• Unbeatablerobustness
• TrenchIGBT4
• Tvjop=150°C
• Highsurgecurrentcapability MechanischeEigenschaften
• HohemechanischeRobustheit
• IntegrierterNTCTemperaturSensor
• PressFITVerbindungstechnik
• RoH
Datasheet
14
FS225R12OE4

Infineon
IGBT

• High Short Circuit Capability, Self Limiting Short CircuitCurrent
• UnbeatableRobustness
• TrenchIGBT4
• Tvjop=150°C
• Highsurgecurrentcapability MechanicalFeatures
• Highmechanicalrobustness
• IntegratedNTCtemperaturesensor
• Isola
Datasheet
15
FS225R12KE4

Infineon
IGBT
-emittersaturationvoltage IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 7,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -
Datasheet
16
FS200R12KT4R_B11

Infineon
IGBT

• LowVCEsat
• TrenchIGBT4
• Tvjop=150°C MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• CopperBasePlate
• PressFITContactTechnology
• StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approv
Datasheet
17
FS25R12KT3

Infineon
IGBT
IC = 25 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskap
Datasheet
18
FS225R17OE4

Infineon
IGBT

• High Short Circuit Capability, Self Limiting Short CircuitCurrent
• UnbeatableRobustness
• TrenchIGBT4
• Tvjop=150°C
• Highsurgecurrentcapability MechanicalFeatures
• Highmechanicalrobustness
• IntegratedNTCtemperaturesensor
• Isola
Datasheet
19
FS225R17KE3

Infineon
IGBT
= 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 9,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein
Datasheet
20
FS225R12KE3

Infineon
IGBT-Module
00 5,8 2,10 3,3 16,0 0,75   0,25 0,30 0,09 0,10 0,55 0,65 0,13 0,16 max. 2,15 6,5     5,0 400  V V V µC Ω nF nF mA nA µs µs µs µs µs µs µs µs mJ mJ mJ mJ  V  A A IC nom  IC ICRM Ptot VGES     A  W  V CharakteristischeWerte/Chara
Datasheet



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