Infineon FP7 fiche technique

No.	Partie #	Fabricant	Description
1	FP75R12KT4P	Infineon	IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerandthermalcyclingcapability • IntegratedNTCtemperaturesensor • Copperbaseplate • Soldercontacttechnology •
2	FP75R12KT4_B15	Infineon	IGBT-Module 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 2,40 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazitä
3	BFP720FESD	Infineon	Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4	FP75R06KE3	Infineon	IGBT GE = 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Inte
5	FP75R07N2E4	Infineon	IGBT • Increasedblockingvoltagecapabilityupto650V • Highshort-circuitcapability • Tvjop=150°C • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Copper
6	FP75R12KE3	Infineon	IGBT Gatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-
7	FP75R17N3E4_B11	Infineon	IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • PressFITcontacttechnology • Standardhousing Modul
8	FP75R12KT4_B11	Infineon	IGBT-Module • LowSwitchingLosses • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • HighPowerandThermalCyclingCapabi
9	FP75R12KT4	Infineon	IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerandthermalcyclingcapability • IntegratedNTCtemperaturesensor • Copperbaseplate • Soldercontacttechnology •
10	BFP750	Infineon	High Linearity Low Noise SiGe:C NPN RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11	BFP760	Infineon	Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	BFP780	Infineon	200mW High Gain RF Driver Amplifier list • High maximum RF input power PRFin,max = 20 dBm • Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA • OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA • OP1dB = 23 dBm at 900 MHz, 5 V, 90 mA Product validation Qualified for industrial applicatio
13	FP75R12KT4P_B11	Infineon	IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerandthermalcyclingcapability • IntegratedNTCtemperaturesensor • Copperbaseplate • PressFITcontacttechnology
14	FP75R12KT3	Infineon	IGBT , VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inp
15	FP75R17N3E4	Infineon	IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Soldercontacttechnology • Standardhousing Module
16	BFP740	Infineon Technologies AG	NPN Silicon Germanium RF Transistor list • Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC4
17	BFP74F	Infineon Technologies AG	NPN Silicon Germanium RF Transistor -65 ... 150 -65 ... 150 mW °C mA Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 2005-11-08 1 www.DataSheet4U.com BFP740F Thermal Resistance Parameter Symbol
18	BFP740F	Infineon	NPN Transistor list • Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 21 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
19	BFP720ESD	Infineon	Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20	BFP720	Infineon	Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .