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Infineon |
IGBT • Integratedcurrentsensor • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • PressFITcontacttechnology • Pre-appliedThermalInterfaceMaterial ModuleLa |
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Infineon |
IGBT sistance,casetoheatsink Temperatureunderswitchingconditions IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V IC = 24,0 mA, VCE = VGE, Tvj = 25°C min. typ. max. Tvj = 25°C Tvj = 125°C VCE sat 2,00 2,45 V 2,40 V VGEth 5,2 5,8 6,4 V VGE = - |
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Infineon |
IGBT-Module • LowSwitchingLosses • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageand |
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Infineon |
IGBT • TrenchIGBT3 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • HighPowerDensity • IsolatedBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK Content |
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Infineon |
IGBT • Electrical features - VCES = 650 V - IC nom = 600 A / ICRM = 1200 A - Trench IGBT 4 - Tvj,op = 150°C - High surge current capability - High short-circuit capability - High current density - Increased blocking voltage capability up to 650 V - Increa |
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Infineon |
IGBT • Integratedcurrentsensor • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • PressFITcontacttechnology • Pre-appliedThermalInterfaceMaterial ModuleLa |
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Infineon |
IGBT • Integratedcurrentsensor • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code Con |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • High Short Circuit Capability, Self Limiting Short CircuitCurrent • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minI |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • High Short Circuit Capability, Self Limiting Short CircuitCurrent • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kV |
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Infineon |
EconoDUAL-3 module • Electrical features - VCES = 1700 V - IC nom = 600 A / ICRM = 1200 A - High current density - Low VCE,sat - Tvj,op = 150°C - VCE,sat with positive temperature coefficient • Mechanical features - High power density - Isolated base plate - Standard h |
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Infineon |
IGBT • Highcurrentdensity • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode Barcode |
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Infineon |
IGBT techarge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C |
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Infineon |
IGBT • Electrical features - VCES = 1200 V - IC nom = 600 A / ICRM = 1200 A - Low VCE,sat - Tvj,op = 150°C - VCE,sat with positive temperature coefficient • Mechanical features - High power density - Isolated base plate - Standard housing Potential applic |
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Infineon |
IGBT-Module • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • Tvjop=150°C • L |
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Infineon |
IGBT-Module • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • Tvjop=150°C • EnlargedDiodeforregenerativeoperation • LowVCEsat MechanischeEigenschaften • GehäusemitCTI>400 • GroßeLuft-undK |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • IncreasedDClinkVoltage • High Short Circuit Capability, Self Limiting Short CircuitCurrent • HighCurrentDensity • TrenchIGBT4 • Tvjop=150°C • Highsurgecurrentcapability MechanischeEige |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Lowswitchinglosses • LowVCEsat • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearanced |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Lowswitchinglosses • LowVCEsat • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearanced |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Lowswitchinglosses • LowVCEsat • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearanced |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • HighPowerandThermalCyclingCapability • HighPowerDensity • IsolatedBasePlate • PressFITContactTechnology ModuleLabelCode BarcodeCode128 |
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