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Infineon |
IGBT-Module • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceD |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • IncreasedDClinkVoltage • Tvjop=150°C • TrenchIGBT4 MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBasePlate • CopperBasePlate • RoHScompliant • StandardHousing |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • ExtendedOperationTemperatureTvjop • High Short Circuit Capability, Self Limiting Short CircuitCurrent MechanicalFeatures • 2.5kVAC1minInsulation • PackagewithCTI>400 • HighCreepageand |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - Low switching losses - High DC stability - High short-circuit capability - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness - VCE,sat with positive temperature coefficient • |
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Infineon |
EconoDUAL-3 module • Electrical features - VCES = 650 V - IC nom = 450 A / ICRM = 900 A - Increased blocking voltage capability up to 650 V - Increased DC-link voltage - High short-circuit capability - High current density - Trench IGBT 4 - Tvj,op = 150°C - High surge |
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Infineon |
IGBT-Module 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj |
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Infineon |
IGBT • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-ap |
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Infineon |
IGBT • Integratedcurrentsensor • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • PressFITcontacttechnology • Pre-appliedThermalInterfaceMaterial ModuleLa |
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Infineon |
IGBT • Electrical features - VCES = 1200 V - IC nom = 450 A / ICRM = 900 A - VCE,sat with positive temperature coefficient - TRENCHSTOPTM IGBT7 - Integrated temperature sensor • Mechanical features - High power density - Isolated base plate - PressFIT con |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Date |
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Infineon |
Double Side Cooled Module /Description FF400R07A01E3_S6 DoubleSideCooledModule TypicalApplications • AutomotiveApplications • HybridElectricalVehicles(H)EV ElectricalFeatures • IncreasedBlockingVoltageCapabilityto700V • IntegratedCurrentSensor • Integrated |
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