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Infineon |
IGBT-Module • ExtendedoperatingtemperatureTvjop • Low |
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Infineon |
IGBT A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingang |
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Infineon |
XHP2 module • Electrical features - VCES = 1700 V - IC nom = 1200 A / ICRM = 2400 A - Extended operating temperature Tvj op - High current density - Low switching losses - Low VCE,sat - Tvj,op = 175°C • Mechanical features - High creepage and clearance distances |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Highshort-circuitcapability • Unbeatablerobustness • Tvjop=175°C • TrenchIGBT5 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalcyclingcap |
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Infineon |
IGBT • LowVCEsat • TrenchIGBT3 MechanicalFeatures • PackagewithCTI>400 • CopperBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MK approvedby:PL ContentoftheCode ModuleSerialNumber ModuleMaterial |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Highshort-circuitcapability • Unbeatablerobustness • Tvjop=175°C • TrenchIGBT5 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalcyclingcap |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Highcurrentdensity • Lowswitchinglosses • LowVCEsat • Tvjop=175°C MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalcyclingcapability • Hig |
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Infineon |
Transient Voltage Suppressor Diodes |
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Infineon Technologies |
Power-Transistor DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, |
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Infineon |
Transient Voltage Suppressor • 1 channel TVS diode designed for portable application • ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on all IOs • Wafer Level Package with SnAgCu solder balls • RoHS and WEEE compliant package • Very small form factor TVS • |
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Infineon |
SIM Card Interface Filter and USB Interface • ESD protection circuit and interface filter for SIM cards • Reduced line capacitance of 12 pF maximum • ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on external IOs • Wafer level package with SnAgCu solder balls • 400 µm so |
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Infineon |
SIM Card Interface Filter and ESD Protection • ESD protection circuit and interface filter for SIM cards • Reduced line capacitance of 12 pF maximum • ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on external IOs • Wafer level package with SnAgCu solder balls • 400 µm so |
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Infineon |
Low Capacitance ESD protection array IPP = 1 A, tp = 8/20 µs1) IPP = 6 A, tp = 8/20 µs1) VFC 9.9 17 1.8 5.6 0.9 0.01 1 pF 1.5 Ω Forward clamping voltage IPP = 1 A, tp = 8/20 µs1) IPP = 6 A, tp = 8/20 µs1) CT Line capacitance2) VR = 3 V, f = 1 MHz www.DataSheet.co.kr Capacitance |
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Infineon |
IGBT • HighspeedIGBTH3 • Lowswitchinglosses MechanicalFeatures • 3kVAC1mininsulation • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITcontacttechnology ModuleLabelCode BarcodeCode |
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Infineon |
Optimos Powerstage • Integrated driver, control MOSFET Q1 and synchronous MOSFET Q2 • On-chip MOSFET Current sensing and reporting at 5uA/A. • Input voltage (VIN) range of 4.25 V to 20 V • VCC and VDRV supply of 4.9 V to 5.5 V • Output voltage range from 0.225 V up to |
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Infineon |
HDMI Interface ESD Protection • ESD protection circuit for control data lines of an HDMI interface • ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on external IOs • Wafer level package with SnAgCu solder balls • 400 µm solder ball pitch • RoHS and WEEE com |
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