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Infineon |
Transient Voltage Suppressor |
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Infineon |
NPN RF bipolar transistor list • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness • High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 |
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Infineon |
Protection Device • ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD): ±14 kV (air), ±12 kV (contact) - IEC61000-4-4 (EFT): ±1.5 kV/±30 A (5/50 ns) - IEC61000-4-5 (surge): ±2 A (8/20 μs) • Bi-directional working voltage up to: VRWM = |
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Infineon |
Silicon TVS diodes ting temperature range Top Storage temperature Tstg Value 30 5 230 -55...150 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics Reverse worki |
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Infineon |
TVS Diodes • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM ±5.3 V • Extremely low capacitance: |
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Infineon |
TVS Diodes • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM ±5.3 V • Extremely low capacitance: |
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Infineon |
Low Capacitance TVS Diode |
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Infineon |
Bi-directional Low Capacitance TVS Diode |
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Infineon |
Bi-directional Low Capacitance TVS Diode |
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Infineon |
Bi-directional Femto Farad Capacitance TVS Diode • ESD/Transient protection of RF and ultra-high speed signal lines according to: – IEC61000-4-2: ±10 kV (contact) • Extremely low capacitance CL = 0.09 pF (typical) at f = 1 GHz • Maximum working voltage: VRWM = ±15 V • Very low reverse current: IR < |
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Infineon |
Transient Voltage Suppressor • ESD / transient protection according to: – IEC61000-4-2 (ESD): ±15 kV (air), ±12 kV (contact) – IEC61000-4-5 (Surge): ±2 A (tp = 8 / 20 µs) • Bi-directional, working voltage up to VRWM = ±18.5 V (AC) • Ultra-low capacitance: CL = 0.3 pF (typical) • |
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Infineon |
Transient Voltage Suppressor • ESD / Transient protection of high speed data lines exceeding – IEC61000-4-2 (ESD): ±20 kV (contact) – IEC61000-4-4 (EFT): ±2 kV / ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM = ±5.3 V • Ultra low capacitan |
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Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
Transient Voltage Suppressor Diodes • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM ±5.3 V • Extremely low capacitance: |
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Infineon |
Transient Voltage Suppressor |
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Infineon |
Bi-directional ESD protection list • ESD / transient protection according to: - IEC61000-4-2 (ESD): ±15 kV (air) / ±15 kV (contact) - IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns) - IEC61000-4-5 (Surge): ±2 A (8/20 μs) • Bi-directional maximum working voltage: VWM = ±3.6 V • Line |
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Infineon |
Bi-directional ESD protection device list • ESD / transient protection according to: - IEC61000-4-2 (ESD): ±20 kV (air) / ±20 kV (contact) - IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns) - IEC61000-4-5 (Surge): ±3.5 A (8/20 μs) • Bi-directional maximum working voltage: VWM = ±5.5 V • Li |
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Infineon |
Low Capacitance TVS Diode |
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Infineon |
Transient Voltage Suppressor Diodes |
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Infineon |
Transient Voltage Suppressor Diodes |
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