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Infineon DF1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
DF100R07W1H5FP_B53

Infineon
IGBT

• CoolSiC(TM)Schottkydiodegen5
• Increasedblockingvoltagecapabilityupto650V
• Lowinductivedesign
• Lowswitchinglosses MechanicalFeatures
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• PressFITcont
Datasheet
2
DF100R07W1H5FP_B54

Infineon
IGBT

• CoolSiC(TM)Schottkydiodegen5
• Increasedblockingvoltagecapabilityupto650V
• Lowinductivedesign
• Lowswitchinglosses MechanicalFeatures
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Soldercontac
Datasheet
3
DF150R12RT4

Infineon
IGBT

• ExtendedOperationTemperatureTvjop
• LowSwitchingLosses
• LowVCEsat
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures
• IsolatedBasePlate
• StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code p
Datasheet
4
DF160R12W2H3F_B11

Infineon
IGBT

• CoolSiC(TM)Schottkydiodegen5
• HighspeedIGBTH3
• Lowswitchinglosses
• thinQHSiCSchottkydiode1200V MechanicalFeatures
• 3kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Compa
Datasheet
5
DF120R12W2H3_B27

Infineon
IGBT

• HighspeedIGBTH3
• Lowswitchinglosses MechanicalFeatures
• 3kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITcontacttechnology ModuleLabelCode BarcodeCode
Datasheet
6
DF1400R12IP4D

Infineon
IGBT

• ExtendedOperationTemperatureTvjop
• HighDCStability
• High Short Circuit Capability, Self Limiting Short CircuitCurrent
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat MechanicalFeatures
• 4kVAC1minInsulation
• Packagewith
Datasheet
7
DF1000R17IE4P

Infineon
IGBT

• ExtendedoperatingtemperatureTvjop
• HighDCstability
• Highcurrentdensity
• Lowswitchinglosses
• LowVCEsat
• Tvjop=150°C MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerandthermalcycl
Datasheet
8
DF11MR12W1M1P_B11

Infineon
MOSFET

• Highcurrentdensity
• Lowinductivedesign MechanicalFeatures
• IntegratedNTCtemperaturesensor
• PressFITcontacttechnology
• Rugged mounting due to integrated mounting clamps
• Pre-appliedThermalInterfaceMaterial ModuleLabelCode Barcod
Datasheet
9
DF11MR12W1M1_B11

Infineon
MOSFET

• Highcurrentdensity
• Lowinductivedesign MechanicalFeatures
• IntegratedNTCtemperaturesensor
• PressFITcontacttechnology
• Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCod
Datasheet
10
DF1000R17IE4D_B2

Infineon
IGBT

• ExtendedOperationTemperatureTvjop
• HighDCStability
• HighCurrentDensity
• LowSwitchingLosses
• LowVCEsat
• Tvjop=150°C
• EnlargedDiodeforregenerativeoperation MechanischeEigenschaften
• GehäusemitCTI>400
• GroßeLuft-undK
Datasheet
11
DF1000R17IE4

Infineon
IGBT

• ExtendedoperatingtemperatureTvjop
• HighDCstability
• Highcurrentdensity
• Lowswitchinglosses
• LowVCEsat
• Tvjop=150°C MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerandthermalcycl
Datasheet



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