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Infineon DD6 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IPDD60R105CFD7

Infineon
MOSFET

•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages Benefits
•Ex
Datasheet
2
IPDD60R080G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
3
IPDD60R150G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
4
IPDD60R050G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
5
DD600N

Infineon
Rectifier Diode

 Pressure contact technology for high reliability
 Advanced Medium Power Technology (AMPT)
 Industrial standard package
 Electrically insulated base plate Typische Anwendungen
 Gleichrichter für Antriebsapplikationen
 Gleichrichter für UPS
 B
Datasheet
6
IPDD60R125G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
7
IPDD60R102G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
8
IPDD60R190G7

Infineon
MOSFET

•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvin
Datasheet
9
DD600S65K3

Infineon
IGBT

• AlSiC base plate for increased thermal cycling capability
• Extended storage temperature down to Tstg = -55°C
• PackagewithCTI>600
• Package with enhanced insulation of 10.4kV AC 10s
• Highcreepageandclearancedistances ModuleLabelCode Ba
Datasheet
10
DD61S

Infineon
Fast Diode

 Pressure contact technology for high reliability
 Industrial standard package
 Electrically insulated base plate Typische Anwendungen
 Gleichrichter für Antriebsapplikationen
 Gleichrichter für UPS
 Batterieladegleichrichter
 Entkopplungsdio
Datasheet
11
IPDD60R045CFD7

Infineon
MOSFET

•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages Benefits
•Ex
Datasheet



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