| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon |
Fast Switching Emitter Controlled Diode 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant Complete product spectrum an |
|
|
|
|
Infineon |
SiC Schottky Barrier diodes Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Q |
|
|
|
|
Infineon |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
|
|
|
|
Infineon |
Power-Transistor • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD100N04S4-02 Product Summary V DS R DS(on),max ID 40 V 2.0 mΩ 100 A PG-TO252-3- |
|
|
|
|
Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
|
|
|
|
Infineon |
Protection Device • ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD): ±14 kV (air), ±12 kV (contact) - IEC61000-4-4 (EFT): ±1.5 kV/±30 A (5/50 ns) - IEC61000-4-5 (surge): ±2 A (8/20 μs) • Bi-directional working voltage up to: VRWM = |
|
|
|
|
Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparamete |
|
|
|
|
Infineon |
Bi-directional Femto Farad Capacitance TVS Diode • ESD/Transient protection of RF and ultra-high speed signal lines according to: – IEC61000-4-2: ±10 kV (contact) • Extremely low capacitance CL = 0.09 pF (typical) at f = 1 GHz • Maximum working voltage: VRWM = ±15 V • Very low reverse current: IR < |
|
|
|
|
Infineon |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparamete |
|
|
|
|
Infineon |
Transient Voltage Suppressor |
|
|
|
|
Infineon |
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode • VRRM = 1200 V • IF = 100 A • 1200 V emitter controlled technology • Maximum junction temperature Tvjmax = 175°C • Low forward voltage (VF) • Low reverse recovery charge • Ultrafast recovery times • Soft recovery characteristics • Pb-free lead plati |
|
|
|
|
Infineon Technologies |
Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • |
|
|
|
|
Infineon |
Transient Voltage Suppressor Diodes • • • • • ESD / Transient protection of signal lines exceeding standard: – IEC61000-4-2 (ESD): ±30 kV air / ±25 kV contact discharge – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (Surge): ±5 A (8/20 μs) One-line diode with ultra-small form f |
|
|
|
|
Infineon |
Power-Transistor • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon • Ultra High ID IPD100N06S4-03 Product Summary V DS R DS(on) |
|
|
|
|
Infineon |
Rectifier Diode Solder-Solder Technology Industrial standard package Electrically insulated base plate Typical Applications Rectifier for drives applications Rectifiers for UPS Battery chargers content of customer DMX code type designation serial number |
|
|
|
|
Infineon |
Transient Voltage Suppressor Diodes • ESD / transient protection of high speed data lines exceeding: – IEC61000-4-2 (ESD): ±24 kV (air), ±20 kV (contact) – IEC61000-4-4 (EFT): ±60 A / ±3 kV (5/50ns) – IEC61000-4-5 (Surge): ±3.5 A (8/20μs) • Maximum working voltage: VRWM = 3.3 V • Ultra |
|
|
|
|
Infineon |
1200V Schottky Diode No reverse recovery current / no forward recovery High surge current capability Temperature independent switching behaviour Low forward voltage even at high operating temperature Tight forward voltage distribution Specified dv/dt ruggedn |
|
|
|
|
Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 30 4.2 100 P-TO252-5-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated |
|
|
|
|
Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
|
|
|
|
Infineon |
IGBT-modules • HighDCstability • Highshort-circuitcapability • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • AlSiC base plate for increased thermal cycling capability • PackagewithCT |
|