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Infineon Technologies |
IGBT POWER MODULE M 25 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA 4.5 5.5 6.5 Collector-emitter saturat |
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Infineon Technologies |
IGBT Module |
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Infineon Technologies |
IGBT Module |
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Infineon Technologies |
IGBT Module |
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Infineon |
IGBT |
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Infineon |
IGBT-Modules # %9 % 8 %9 % : $, 3 E? 2_ b %% E ? 2 " -./ ) -2 -A/ ) -2 &'( ) *+, 3. ) 82 -./ ) 7 -A/ ) W * - A54 ) 2 M &'( ) *+, &'( ) *+, 3. ) 82 -./ ) 7 -A/ ) W * - A54 ) 2 M &'( ) *+, &'( ) *+, 3. ) 82 -./ ) 7 -A/ ) W * - A5YY ) 2 M &'( ) *+, &'( ) |
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