| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Ele |
|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Ele |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon |
PNP Silicon Darlington Transistors nit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 BCP28 30 - BCP48 60 - V - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 BCP28 40 - - BCP48 80 - - Emitter-bas |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon |
NPN Silicon Darlington Transistors ameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VC |
|
|
|
|
Infineon |
PNP Silicon Darlington Transistors nit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 BCP28 30 - BCP48 60 - V - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 BCP28 40 - - BCP48 80 - - Emitter-bas |
|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors 24 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note The |
|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Ele |
|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Ele |
|
|
|
|
Infineon Technologies AG |
PNP Silicon AF Transistors ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Ele |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistors erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon AF Transistor haracteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emit |
|
|
|
|
Infineon |
NPN Silicon Darlington Transistors nit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 BCP29 30 - BCP49 60 - V - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IE = 0 BCP29 40 - - BCP49 80 - - Emitter-bas |
|