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Infineon |
Silicon Switching Diode al Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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Infineon |
Silicon Switching Diode al Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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Infineon Technologies AG |
Silicon Low Leakage Diode Array |
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Infineon Technologies AG |
Silicon Low Leakage Diode |
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Infineon Technologies AG |
Silicon Switching Diode oint1) BAV99 BAV99S BAV99U BAV99W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value ≤ 360 ≤ 260 ≤ 150 ≤ 160 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV9 |
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Infineon Technologies AG |
Silicon Switching Diode oint1) BAV99 BAV99S BAV99U BAV99W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value ≤ 360 ≤ 260 ≤ 150 ≤ 160 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV9 |
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Infineon Technologies AG |
Silicon Low Leakage Diode V VR = 75 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω Test circuit for reverse re |
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Infineon Technologies AG |
Silicon Switching Diode |
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Infineon Technologies AG |
Silicon Switching Diode istance Parameter Junction - soldering point 1) BAV70 BAV70F BAV70L3 BAV70S BAV70T BAV70U BAV70W 1For Symbol VR VRM IF IFSM Value 80 85 200 4.5 1 0.5 0.75 Unit V mA A Ptot 250 250 250 250 250 250 250 Tj Tstg Symbol RthJS ≤ 460 ≤ tbd ≤ tbd ≤ 260 ≤ |
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Infineon Technologies AG |
Silicon Switching Diode ance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA |
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Infineon Technologies AG |
Silicon Switching Diode istance Parameter Junction - soldering point 1) BAV70 BAV70F BAV70L3 BAV70S BAV70T BAV70U BAV70W 1For Symbol VR VRM IF IFSM Value 80 85 200 4.5 1 0.5 0.75 Unit V mA A Ptot 250 250 250 250 250 250 250 Tj Tstg Symbol RthJS ≤ 460 ≤ tbd ≤ tbd ≤ 260 ≤ |
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Infineon Technologies AG |
Silicon Switching Diode ance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA |
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Infineon Technologies AG |
Silicon Switching Diode Array ecovery time measured at IR = 1mA IF = 10 mA, IR = 10 mA, RL = 100 , trr 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max. Unit V µA pF ns Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0. |
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Infineon Technologies AG |
Silicon Switching Diode |
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Infineon Technologies AG |
Silicon Switching Diode oint1) BAV99 BAV99S BAV99U BAV99W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value ≤ 360 ≤ 260 ≤ 150 ≤ 160 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV9 |
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Infineon Technologies AG |
Silicon Switching Diode |
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Infineon Technologies AG |
Silicon Switching Diode oint1) BAV99 BAV99S BAV99U BAV99W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value ≤ 360 ≤ 260 ≤ 150 ≤ 160 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV9 |
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