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Infineon Technologies AG |
Silicon Schottky Diode 1 MHz Differential forward resistance IF = 10mA / 50mA RF 5.5 CT 0.22 0.35 pF Symbol min. V(BR) VF 0.36 0.48 4 Values typ. max. - Unit V 0.43 0.55 0.52 0.66 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) f = 1MHz 0.5 pF Reverse c |
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Infineon |
Silicon Schottky Diodes |
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Infineon Technologies AG |
Silicon Schottky Diode 67 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAT15-02L, BAT15-02V BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099R 1For Symbol VR IF Ptot Value 4 110 100 1 |
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Infineon Technologies AG |
Silicon RF Switching Diode - 20 - - 200 VF - 0.92 1.2 AC Characteristics Diode capacitance VR = 20 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz rf Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA , RL = 100 Ω I-region width WI |
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Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
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Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
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Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
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Infineon |
Silicon Schottky Diodes 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon |
Silicon Schottky Diodes 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon Technologies AG |
Silicon Schottky Diodes 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon Technologies AG |
Silicon Schottky Diode 67 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAT15-02L, BAT15-02V BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099R 1For Symbol VR IF Ptot Value 4 110 100 1 |
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Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
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Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
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Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
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Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
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Infineon Technologies AG |
Silicon RF Switching Diode |
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Infineon Technologies AG |
Silicon RF Switching Diode - 20 - - 200 VF - 0.92 1.2 AC Characteristics Diode capacitance VR = 20 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz rf Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA , RL = 100 Ω I-region width WI |
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