| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
Silicon RF Switching Diode teristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 VF - - 1 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit nA V 2 2011-07-21 BA592/BA892... Electrical Characteristics at TA = 25°C, unle |
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Infineon Technologies AG |
Silicon PIN Diode istance Calculation) Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 VF - - 1.1 AC Charac |
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Infineon Technologies AG |
Silicon RF Switching Diode teristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 VF - - 1 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit nA V 2 2011-07-21 BA592/BA892... Electrical Characteristics at TA = 25°C, unle |
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Infineon Technologies AG |
Silicon RF Switching Diode teristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 VF - - 1 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit nA V 2 2011-07-21 BA592/BA892... Electrical Characteristics at TA = 25°C, unle |
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Infineon Technologies AG |
Silicon PIN Diode istance Calculation) Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 VF - - 1.1 AC Charac |
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Infineon |
Silicon PIN Diode istance Calculation) Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 VF - - 1.1 AC Charac |
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