| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon Technologies Corporation |
Power Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 • 175 °C operating temperature • dv /dt rated |
|
|
|
|
Infineon |
Power-Transistor $ - , 6F ) =I / ( 8 T $ 9$]aY_R ) =I / ( 8 T ( 8 T $ 6I ( 8 T # 6I $ 9 ' =I " Q/ 'Q. $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T ) =I A2 86 FJ |
|
|
|
|
Infineon |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% A |
|
|
|
|
Infineon |
Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 |
|
|
|
|
Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.0 mW 120 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pr |
|
|
|
|
Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.5 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pr |
|
|
|
|
Infineon |
MOSFET •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoI |
|
|
|
|
Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
|
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt ra |
|
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
|
|
|
|
Infineon |
MOSFET •OptimizedforhighperformanceSMPS,e.g.sync.rec. •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;R |
|
|
|
|
Infineon |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|
|
|
|
Infineon |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% A |
|
|
|
|
Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 5.0 mW 60 A PG-TDSON-8-57 • Half-Bridge - N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur |
|
|
|
|
Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL3 up to 260°C peak reflow • 175°C operating temperature • Gr |
|
|
|
|
Infineon |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
|
|
|
|
Infineon Technologies |
SIPMOS Power Transistor |
|
|
|
|
Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.9 m 120 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product |
|
|
|
|
Infineon |
MOSFET •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh |
|