| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
SPW47N60C3 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
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Infineon |
SPW47N60CFD |
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Infineon Technologies |
Power Transistor • Worldwide best R ds,on in TO247 • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ SPW47 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A |
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Infineon |
MOSFET R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"\[# Product Summary V ;I R -@ ?>2 I I; )*( K ),&/ Z" -. 7 R U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ > |
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Infineon |
Power-Transistor |
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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package |
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Infineon |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW47N60S5 Package P |
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Infineon Technologies |
Cool MOS Power Transistor 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 Product Summary VDS RDS(on) ID 600 0.07 47 P-TO247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • I |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature www.DataSheet4U.com Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N1 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level www.DataSheet4U.com 175°C operating temperature Avalanche rated dv/dt rated 100 26 47 P-TO220-3-1 V m A Type SP |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A |
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Infineon Technologies |
Power-Transistor 2 ? 5 $ - , 6F $ 9$]aY_R $ 6I # 6I Q/ 'Q. ) =I ) =I / ( 8 T ) =I / ( 8 T ( 8 T ( 8 T $ 9 ' =I " $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T A2 86 FJU] |
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Infineon Technologies |
Power-Transistor 2 ? 5 $ - , 6F $ 9$]aY_R $ 6I # 6I Q/ 'Q. ) =I ) =I / ( 8 T ) =I / ( 8 T ( 8 T ( 8 T $ 9 ' =I " $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T A2 86 FJU] |
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Infineon |
MOSFET R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"\[# Product Summary V ;I R -@ ?>2 I I; )*( K ),&/ Z" -. 7 R U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ > |
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Infineon |
MOSFET R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"\[# Product Summary V ;I R -@ ?>2 I I; )*( K ),&/ Z" -. 7 R U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ > |
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Infineon |
Power-Transistor $ - , 6F ) =I / ( 8 T $ 9$]aY_R $ 6I # 6I Q/ 'Q. ) =I ) =I / ( 8 T ( 8 T ( 8 T $ 9 ' =I " $ 9 ) 9I / Q- 'Q. W C ( W$ZNd T A2 86 FJU]N *( |
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Infineon Technologies |
CoolMOS Power Transistor TM Power Transistor Product Summary V DS R DS(on),max ID 600 V • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge www.DataSheet4U.com • Extreme dv /dt r |
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