Infineon 24N fiche technique

No.	Partie #	Fabricant	Description
1	24N60C3	Infineon	SPW24N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A
2	AUIRLR024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
3	BSC0924NDI	Infineon	Dual N-Channel OptiMOS MOSFET Product Summary • Dual N-channel OptiMOS™ MOSFET • Integrated monolithic Schottky-like diode • Optimized for high performance Buck converter • Logic level (4.5V rated) • 100% avalanche tested VDS RDS(on),max ID VGS=10 V VGS=4.5 V • Qualified acc
4	BSF024N03LT3G	Infineon	Power-Transistor • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 V 2.4 mΩ 106 A • Low parasitic inductance • Low profile (<0.7 mm) •
5	AUIRLL024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
6	AUIRLU024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
7	AUIRFZ24NS	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified
8	IPI024N06N3G	Infineon Technologies	Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q
9	BGA924N6	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10	IPP024N06N3	Infineon	Power Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q)
11	AUIRFR024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description
12	IAUC24N10S5L300	Infineon	Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 30 mW 24 A PG-TDSON-8 • N-channel - Enhancement mode - Logic level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche t
13	AUIRFZ24NL	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified
14	AUIRFR9024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *
15	AUIRFU9024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *
16	SPW24N60C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A
17	SPP24N60C3	Infineon Technologies	Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS
18	BSB024N03LXG	Infineon	Power MOSFET • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high
19	IPP024N06N3G	Infineon Technologies	Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q
20	BGA824N6	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .