Infineon 021 fiche technique

No.	Partie #	Fabricant	Description
1	TLF50211EL	Infineon Technologies	2.2 MHz Step-Down Regulator such as a cycle-by-cycle current limitation, over-temperature shutdown and input under voltage lockout. The enable function, in shutdown mode with less than 2 µA current consumption, enables easy power management in battery-powered systems. The volta
2	TLF50211ELV50	Infineon	2.2MHz Step-Down Regulator • 500 mA step down voltage regulator • 5 V Output voltage • ±2% output voltage tolerance • Low quiescent current (less than 45 µA at nominal battery voltage) • Integrated power transistor • Current mode PWM regulation • PFM mode for light load curren
3	D0212C5	Infineon	Power MOSFET  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution
4	IAUCN10S7N021	Infineon	Automotive MOSFET
5	HYS64D128021GBDL-5-B	Infineon	200-Pin Small Outline Dual-In-Line Memory Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6	HYS64T128021GDL-5-A	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7	HYS64T128021HDL-5-A	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8	ICLS6021J	Infineon Technologies AG	LED System Driver ICs Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies com
9	HYS64D128021	Infineon	200-Pin Small Outline Dual-In-Line Memory Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10	HYS64D128021GBDL-6-B	Infineon	200-Pin Small Outline Dual-In-Line Memory Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11	HYS64D128021HBDL-5-B	Infineon	200-Pin Small Outline Dual-In-Line Memory Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	HYS64D128021HBDL-6-B	Infineon	200-Pin Small Outline Dual-In-Line Memory Modules ngerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon
13	HYS64T128021GDL	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14	HYS64T128021GDL-37-A	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15	HYS64T128021HDL	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16	HYS64T128021HDL-37-A	Infineon	200-Pin Small Outline Dual-In-Line Memory Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17	IPB021N06N3G	Infineon Technologies	Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q
18	T4021N	Infineon	Phase Control Thyristor  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe DC Sperrstabilität  Hohe Stoßstrombelastbarkeit  Hoher Gehäusebruchstrom  Hohe Einschalt di/dt Fähigkeit  Full blocking 50/60Hz over a wide range temperature range  High
19	IPB021N06N3	Infineon	Power Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q)
20	021N06N	Infineon	Power Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q)