| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia |
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Inchange Semiconductor |
P-Channel MOSFET Transistor ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) @ VGS= -10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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