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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 17.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 330mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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