| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast with soft recovery ·175℃ Operating temperature ·Popular TO-220 package ·Avalanche energy rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circu |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
|
|
|
|
Inchange Semiconductor |
UltraFast REcovery Rectifiers ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Res |
|
|
|
|
Inchange Semiconductor |
Ultrafast Rectifier ·Ultrafast 50 nanosecond recovery time ·Popular TO-220 package ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MUR860CT is designed for use in switc |
|
|
|
|
Inchange Semiconductor |
Ultrafast Rectifier ·Popular TO-220 package ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MUR840CT is designed for use in switching power Supplies,inverters and as fr |
|
|
|
|
Inchange Semiconductor |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies, i |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast 35 and 60 nanosecond recovery time ·Popular TO-220 package ·Low forward drop ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MUR1560 is d |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
|
|
|
|
Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARAC |
|
|
|
|
Inchange Semiconductor |
Fast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies, in |
|