Inchange Semiconductor MBR fiche technique

No.	Partie #	Fabricant	Description
1	MBR1545CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Center-Tap Configuation ·Guardring for Stress protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati
2	MBR10150CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·M
3	MBRF20150CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Low power loss, high efficiency. ·Multilayer Metal -Silicon Potential Structure. ·Beautiful High Temperature Character. ·Have Over Voltage protect loop，high reliability. MECHANICAL CHARACTERISTICS ·Be optimized for ultra-low forward voltage drop to
4	MBRB2060CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
5	MBR3045CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheel
6	MBR3045WT	Inchange Semiconductor	Schottky Barrier Rectifier ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu
7	MBR10150	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·M
8	MBR730	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and rel
9	MBR1560	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable oper
10	MBR1645CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Low Forward Voltage ·170℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All
11	MBRB20100CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
12	MBR10200CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·M
13	MBR780	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and rel
14	MBR60L45CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati
15	MBR2045	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable oper
16	MBR1535CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Center-Tap Configuation ·Guardring for Stress protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati
17	MBR1530	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal of siliconrectifier, majonty carrier conducton ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operat
18	MBR2045CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Dual Rectifier Conduction, Positive Center Tap ·Metal Silicon Junction, Majority Carrier Conduction ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use
19	MBRF10L60CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
20	MBR2090CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia