Inchange Semiconductor KSA fiche technique

No.	Partie #	Fabricant	Description	Fiche Technique
1	KSA614	Inchange Semiconductor	Power Transistor -Base Breakdown Voltage IC= -500μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current
2	KSA1614	Inchange Semiconductor	Power Transistor ltage Collector-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=-10mA ; IB=0 B KSA1614 MIN -55 -80 -5 TYP. MAX UNIT V V V IC=-500μA ; IE=0 IE=-500μA ; IC=0 IC=-1A ;IB=-0.1A B -0.15 -0.5 -50 V μA VCB=-50V;