| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
2SK2299 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor MBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward on-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitan |
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Inchange Semiconductor |
N-Channel MOSFET Transistor S Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward on-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer |
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Inchange Semiconductor |
N-Channel MOSFET Transistor SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance |
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Inchange Semiconductor |
N-Channel MOSFET Transistor -Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 2SK2237 MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.6 Ω ±100 µA 500 µA NOTICE： ISC reserves the rights to make changes of the content herein the da |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA VGS= 10V; ID= 4A VGS= ±30V;VDS= 0 VDS= 450V; VGS= 0 VDS=10V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ) Drain-Source On-Resistance VGS= 10V; ID= 22.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 2SK2236 MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.6 Ω ±100 µA 500 µA NOTICE： ISC reserves the rights to make changes of the content herein the |
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Inchange Semiconductor |
N-Channel MOSFET Transistor SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacita |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer |
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Inchange Semiconductor |
N-Channel MOSFET Transistor OL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance |
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