No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·High efficiency switch mode power su |
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