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Inchange Semiconductor HG2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
HG2N60

Inchange Semiconductor
N-Channel Mosfet Transistor

·Drain Current
  –ID= 2A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·High efficiency switch mode power su
Datasheet



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