| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
2SC2026 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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Inchange Semiconductor |
Ultrafast Rectifier ·TO-263 package. ·Super fast switching for high efficiency. ·Low reverse leakage. ·High forward surge current capability. ·RoHs Product. ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP |
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