Inchange Semiconductor BUS fiche technique

No.	Partie #	Fabricant	Description
1	BUS48A	Inchange Semiconductor	Silicon NPN Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-
2	BUS98A	Inchange Semiconductor	Silicon NPN Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter
3	BUS131A	Inchange Semiconductor	Silicon NPN Power Transistor
4	BUS24C	Inchange Semiconductor	Silicon NPN Power Transistor
5	BUS48	Inchange Semiconductor	Silicon NPN Power Transistor tion BUS48 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS48 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)
6	BUS22C	Inchange Semiconductor	Silicon NPN Power Transistor
7	BUS131	Inchange Semiconductor	Silicon NPN Power Transistor
8	BUS133A	Inchange Semiconductor	Silicon NPN Power Transistor 33/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS133 BUS133A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitte
9	BUS132H	Inchange Semiconductor	Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Vol
10	BUS24B	Inchange Semiconductor	Silicon NPN Power Transistor
11	BUS22	Inchange Semiconductor	Silicon NPN Power Transistor
12	BUS133H	Inchange Semiconductor	Silicon NPN Power Transistor ied SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VCE(sat)-2 Collector-Emitter Saturation
13	BUS133	Inchange Semiconductor	Silicon NPN Power Transistor 33/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS133 BUS133A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitte
14	BUS132A	Inchange Semiconductor	Silicon NPN Power Transistor 2/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS132 BUS132A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitter
15	BUS131H	Inchange Semiconductor	Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Vo
16	BUS48P	Inchange Semiconductor	Silicon NPN Power Transistor NIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SY
17	BUS50	Inchange Semiconductor	Silicon NPN Power Transistor Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 35A; IB= 2A VCE(sat)-
18	BUS23	Inchange Semiconductor	Silicon NPN Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUS23 BUS23A IC= 50mA ; IB= 0
19	BUS22B	Inchange Semiconductor	Silicon NPN Power Transistor
20	BUS132	Inchange Semiconductor	Silicon NPN Power Transistor 2/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS132 BUS132A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitter