| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon PNP Power Transistor ors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCE(sat)-1 Collector-Emitter Saturation Voltage CONDITIONS IC= -50mA ;IB= 0 IC= -10A; IB= -1 A VCE(sat)-2 Coll |
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Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base |
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Inchange Semiconductor |
Silicon PNP Power Transistor HARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.5 V VBE |
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