| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swit |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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