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Inchange Semiconductor 30N DataSheet

No. Partie # Fabricant Description Fiche Technique
1
30N06

Inchange Semiconductor
N-Channel MOSFET

·Static drain-source on-resistance: RDS(on) ≤0.05Ω
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
Datasheet
2
30N12

Inchange Semiconductor
N-Channel MOSFET Transistor

·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage- : VDSS= 120V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(
Datasheet
3
30N15

Inchange Semiconductor
N-Channel MOSFET Transistor

·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage- : VDSS= 150V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(
Datasheet
4
30N10

Inchange Semiconductor
N-Channel MOSFET

·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage- : VDSS= 100V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(T
Datasheet
5
30N05

Inchange Semiconductor
N-Channel MOSFET

·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage- : VDSS= 50V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta
Datasheet
6
STB30NF20

Inchange Semiconductor
N-Channel MOSFET Transistor

·Drain Current : ID= 30A@ TC=25℃
·Drain Source Voltage : VDSS= 200V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation D
Datasheet



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