| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel MOSFET Transistor BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.7A IGSS Gate Source Leakage Current VGS=±20V;VDS= 0 IDSS Zero Gate Voltage Dra |
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