No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon NPN Power Transistor fied SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Colle |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0 30 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 55 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 |
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Inchange Semiconductor |
Silicon NPN Power Transistor rademark 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N3053 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA ; |
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Inchange Semiconductor |
Silicon NPN Power Transistors rwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current ga |
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Inchange Semiconductor |
Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Volt |
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Inchange Semiconductor |
Silicon PNP Power Transistor ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hF |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 |
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Inchange Semiconductor |
Silicon NPN Power Transistor aining Voltage IC=10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V hFE DC Current Gain IC= 5A; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f= 1.0MHz |
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Inchange Semiconductor |
Silicon PNP Power Transistor n Voltage IC= -3A; IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; VCE=-0.6V ICEO Collector Cutoff Current VCE= -100V; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -3V 2N3198 MIN MAX UNIT |
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Inchange Semiconductor |
Silicon PNP Power Transistor ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hF |
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Inchange Semiconductor |
Silicon PNP Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= - |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 |
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Inchange Semiconductor |
Silicon NPN Power Transistor aining Voltage IC=30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.33A VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 12V hFE DC Current Gain IC= 10A; VCE= 12V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f= 1. |
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Inchange Semiconductor |
Silicon PNP Power Transistor n Voltage IC= -2A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; VCE=-0.3V ICEO Collector Cutoff Current VCE= -80V; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -2A ; VCE= -3V 2N3186 MIN MAX UNIT |
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Inchange Semiconductor |
Silicon NPN Power Transistor ng Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.2A hFE DC Current Gain *:Pulse test:Pulse width=300us, |
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Inchange Semiconductor |
Silicon NPN Power Transistor ion Voltage VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC=0.1mA ; IE=0 IC=150mA; IB= 15mA IC= 0.5A; IB= 50mA IC= 150mA ; IB=15mA VCE= 90V; IB=0 IEBO Emitter Cutoff Current VEB= 5.0V; IC=0 hFE-1 hFE-2 DC Current Gain |
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Inchange Semiconductor |
Silicon NPN Power Transistor Sheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3583 MAX UNIT VCEO(SUS) Collector-Emitter Sustaini |
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