| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta= |
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Inchange Semiconductor |
Silicon NPN Power Transistor mitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter |
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Inchange Semiconductor |
Silicon NPN Power Transistor Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS( |
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Inchange Semiconductor |
Silicon PNP Power Transistor RACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; RBE= 100Ω VCE(sat)-1 |
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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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