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IXYS |
High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS |
IXRH50N60 q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS |
IGBT • Very high frequency IGBT • New generation HDMOSTM process • Internationalstandardpackage JEDEC TO-247 • High peak current handling capability Symbol BVCES VGE(th |
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IXYS |
Power MOSFET • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - low |
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IXYS Corporation |
HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching ( |
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IXYS |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS |
PolarHV HiPerFET Power MOSFET z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb.in. 10 6 g g z International standard pa |
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IXYS Corporation |
Hiperfast IGBT G = Gate, E = Emitter, E C (TAB) C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263 • International standard packages JEDEC TO-263 surface |
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IXYS Corporation |
IGBT q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simp |
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IXYS |
IGBT |
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IXYS |
IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver |
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IXYS |
IGBT z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver |
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IXYS |
IGBT International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inver |
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IXYS |
IGBT l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS |
High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 |
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IXYS Corporation |
IGBT · International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High frequency IGBT · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Char |
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