| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS Corporation |
Power MOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS |
Phase Control Thyristor |
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IXYS |
Phase Control Thyristor |
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IXYS Corporation |
HiPerFAST IGBT • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives |
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IXYS Corporation |
HiPerFAST IGBT • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • • • • • AC motor speed control DC servo and robot d |
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IXYS Corporation |
Power MOSFET l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99155E(10/05) |
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IXYS Corporation |
PolarHTTM HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Weight ISOPLUS220 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) V |
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IXYS Corporation |
IXTA36N30P 1.13/10 Nm/lb.in. 5.5 4 3 g g g z z Md Weight z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VG |
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IXYS Corporation |
Power MOSFET z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode a |
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IXYS |
PolarHT HiPerFET Power MOSFET z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages |
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IXYS |
GigaMOS Power MOSFET z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3 |
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IXYS Corporation |
HiPerFET Power MOSFETs l International standard packages l JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification l miniBLOC with Aluminium nitride isolation l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching |
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IXYS Corporation |
GigaMOS Power MOSFET z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque International Standard Package m |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • • • • z z z miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source t = 1min t = 1s Mounting torque Terminal connection torque Fast intrinsic diode Avalanche |
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IXYS Corporation |
Power MOSFET International Standard Packages Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switc |
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IXYS Corporation |
Polar HiPerFET Power MOSFET z z z z z D = Drain Tab = Drain 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264 300 260 1.13/10 4 6 10 International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) an |
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IXYS |
GenX3 300V IGBT z z z = = ≤ = 300V 85A 1.9V 70ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC |
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IXYS |
Monolithic Bipolar MOS Transistor Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Densit |
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IXYS |
Phase Control Thyristor |
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IXYS |
Phase Control Thyristor |
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