IXYS MWI fiche technique

No.	Partie #	Fabricant	Description
1	MWI100-12E8	IXYS	IGBT Modules • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forwa
2	MWI35-12A7T	IXYS Corporation	IGBT Modules NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f
3	MWI150-06A8	IXYS Corporation	IGBT Modules • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage control
4	MWI75-12E8	IXYS Corporation	IGBT • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forwa
5	MWI75-06A7	IXYS Corporation	IGBT NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f
6	MWI35-12A7	IXYS	IGBT Modules q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage control
7	MWI50-06A7	IXYS	IGBT Module ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage control
8	MWI50-06A7T	IXYS	IGBT Module ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage control
9	MWI30-12E6K	IXYS	IGBT Module • SPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery
10	MWI15-12A7	IXYS Corporation	IGBT Modules Sixpack NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f
11	MWI50-12E7	IXYS Corporation	Short Circuit SOA Capability Square RBSOA • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forwa
12	MWI75-12A5	IXYS Corporation	IGBT NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f
13	MWI75-12A8	IXYS Corporation	IGBT • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage control
14	MWI75-06A7T	IXYS Corporation	IGBT NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f
15	MWI100-06A8	IXYS	IGBT Modules ● ● ● ● ● ● ● ● ● ● ● VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C non-repetitive TC = 25°C NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capabilit
16	MWI45-12T6K	IXYS	IGBT Module • Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recover
17	MWI60-12T6K	IXYS	IGBT Module • Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recover
18	MWI80-12T6K	IXYS	IGBT Module • Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recover
19	MWI30-06A7	IXYS	IGBT Module ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage control
20	MWI30-06A7T	IXYS	IGBT Module ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage control