IXYS MIX fiche technique

No.	Partie #	Fabricant	Description
1	MIXA600CF650TSF	IXYS	XPT IGBT / Advantages: ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBS
2	MIXA30WB1200TED	IXYS	IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI • Thin wafer technology
3	MIXA20WB1200TMI	IXYS	XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x
4	MIXA30W1200TED	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC -
5	MIXA30WB1200TMI	IXYS	XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x
6	MIXA80W1200TED	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EM
7	MIXG240W1200PZTEH	IXYS	X2PT IGBT / Advantages: • X2PT - 2nd generation Xtreme light Punch Through • Tvjm = 175°C • Easy paralleling due to the positive temperature coefﬁcient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate
8	MIXA150W1200TEH	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin waf
9	MIXG240W1200TEH	IXYS	X2PT IGBT / Advantages: • X2PT - 2nd generation Xtreme light Punch Through • Tvjm = 175°C • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 μsec. - very low gate
10	MIXD600PF650TSF	IXYS	XPT IGBT / Advantages: • High level of integration - only one power semiconductor module required for the whole drive • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBS
11	MIXG180W1200TEH	IXYS	X2PT IGBT / Advantages: • X2PT - 2nd generation Xtreme light Punch Through • Tvjm = 175°C • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 μsec. - very low gate
12	MIXA40WB1200TED	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - lo
13	MIXA10WB1200TED	IXYS	IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI • Thin wafer technology
14	MIXA10WB1200TML	IXYS	IGBT • High level of integration - only one power semiconductor module required for the whole drive • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC
15	MIXA20W1200MC	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC -
16	MIXA20W1200TML	IXYS	XPT IGBT • High level of integration • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results
17	MIXA20WB1200TED	IXYS	IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI • Thin wafer technology
18	MIXA30W1200TML	IXYS	XPT IGBT • High level of integration • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results
19	MIXA40W1200TED	IXYS	XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC -
20	MIXA40W1200TML	IXYS	XPT IGBT • High level of integration • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results