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IXYS MIE DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MIEB100W1200DPFTEH

IXYS
SPT+IGBT

• SPT+ IGBT technology
• low saturation voltage
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for easy parallelling
• MOS input, voltage c
Datasheet



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