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IXYS Corporation |
Power MOSFET q q ID ID IDM PD IS ISM VRRM IdAV IFSM q q q q q Package with DCB ceramic base plate Soldering connections for PCB mounting Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Ultrafast boost diod |
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IXYS Corporation |
MOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
(IXTMxxxx) MOS FETs |
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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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